isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPB090N06N3
·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IPB090N06N3
·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very low on-resistance ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGSS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
50
IDM
Drain Current-Single Pulsed
200
PD
Total Dissipation
71
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 1.6 62
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IPB090N06N3
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1mA
60
V
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=0.034mA
2
4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=50A
7.7
9.0
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 60V; VGS= 0V;@Tj=25℃ Tj=125℃
ISD=50A, VGS = 0 V
±0.1 μA
1 100
μA
1.2
V
NOTICE： ISC reserves the righ...
