IPD30N03S2L

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPD30N03S2L ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 120 PD Total Dissipation @TC=25℃ 136 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.1 75 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPD30N03S2L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA VGS(th) Gate Threshold Voltage VDS=±20V; ID=0.085mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=30A IGSS IDSS VSDF Gate-Source Leakage Current VGS= ±20V;VDS= 0V Drain-Source Leakage Current VDS=30V; VGS= 0V;Tj=25℃ Tj=125℃ Diode forward voltage ISD=50A, VGS = 0 V 30 V 1.2 2.0 V 5.6 6.7 mΩ ±0.1 μA 1 100 μA 1.3 V NO...