isc N-Channel MOSFET Transistor
·FEATURES ·With low gate drive requirements ·Very high commutation ruggedness ·Extremely...
isc N-Channel MOSFET
Transistor
·FEATURES ·With low gate drive requirements ·Very high commutation ruggedness ·Extremely high frequency operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
IPP60R060P7
·APPLICATIONS ·Switching applications ·LCD&PDP TV ·PC silverbox ·UPS and solar
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM PD
Gate-Source Voltage Drain Current-Continuous@TC=25℃
TC=100℃ Drain Current-Single Pulsed
Total Dissipation
±20 48 30 151
164
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.76 62
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IPP60R060P7
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1mA
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=0.8mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=15.9A
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= 600V; VGS= 0V
VSDF
Diode forward voltage
ISD=15.9A, VGS = 0 V
600
V
2.5
3.5
V
49
60
mΩ
±0.1 μA
1
μA
0....
