isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF540FI
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gat...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IRF540FI
·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
16
A
IDM
Drain Current-Single Plused
120
A
PD
Total Dissipation @TC=25℃
45
W
Tj
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0
℃/W
Rth j-a Thermal Resistance,Junction to Ambient
80
℃/W
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isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IRF540FI
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID= 15A VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 100V; VGS=0
VSD
Forward On-Voltage
IS= 16A...