isc P-Channel MOSFET Transistor
·FEATURES ·P-channel ·With TO-263(D2PAK) packaging ·Uninterruptible power supply ·High s...
isc P-Channel MOSFET
Transistor
·FEATURES ·P-channel ·With TO-263(D2PAK) packaging ·Uninterruptible power supply ·High speed switching ·Ultra low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
INCHANGE Semiconductor
IRF5210SPBF
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-100
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±20
-38 -24
-140
PD
Total Dissipation
170
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.75 40
UNIT ℃/W ℃/W
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isc P-Channel MOSFET
Transistor
INCHANGE Semiconductor
IRF5210SPBF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=- 0.25mA
-100
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=-0.25mA
-2
RDS(on)
Drain-Source On-Resistance
VGS= -10V; ID=-38A
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= -100V; VGS= 0V;Tj=25℃ VDS= -80V; VGS= 0V;Tj=125℃
ISD=-23A, VGS = 0 V
V
-4
V
60
mΩ
±0.1 μA
...
