IRF7473TRPBF

isc N-Channel MOSFET Transistor ·FEATURES ·With SOP-8 packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGSS ID IDM Gate-Source Voltage Drain Current-Continuous Drain Current-Single Pulsed Tc=25℃ Tc=75℃ PD Power Dissipation Tj Operating Junction Temperature Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-a) Channel-to-ambient thermal resistance INCHANGE Semiconductor IRF7473TRPBF VALUE 100 ±20 6.9 5.5 55 2.5 -55~150 -55~150 UNIT V V A A W ℃ ℃ MAX 50 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF7473TRPBF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS=±20V; ID=0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=4.1A IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS= ±20V;VDS= 0V VDS= 95V; VGS= 0V;Tj=25℃ VDS= 80V; VGS= 0V;Tj=150℃ ISD=4.1A, VGS = 0 V 100 V 3.5 5.5 V 22 26 mΩ ±0.1 μA 1 250 μA 1.3 V NOTICE： ISC reserves the rights to make changes of the co...