IRFB4310ZPBF

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IRFB4310ZPBF ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 127 90 560 PD Total Dissipation 250 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.6 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB4310ZPBF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS=±20V; ID=0.15mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=75A IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS= ±20V;VDS= 0V VDS= 100V; VGS= 0V;Tj=25℃ VDS= 80V; VGS= 0V;Tj=125℃ ISD=75A, VGS = 0 V 100 V 2.0 4.0 V 4.8 6.0 mΩ ±0.1 μA 20 250 μA...