Isc N-Channel MOSFET Transistor
·FEATURES ·With To-262(I2PAK) package ·Low input capacitance and gate charge ·Low gate ...
Isc N-Channel MOSFET
Transistor
·FEATURES ·With To-262(I2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
PD
Total Dissipation
Tj
Operating Junction Temperature
Tstg
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c)
Channel-to-case thermal resistance
Rth(ch-a)
Channel-to-ambient thermal resistance
INCHANGE Semiconductor
IRFSL4127
VALUE 200 ±20 72 51 300 375
-55~175
-55~175
UNIT V V A A W ℃ ℃
MAX 0.4 40
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IRFSL4127
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
200
V
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=0.25mA
3
5
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=44A
18.6
22
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 200V; VGS= 0V；TJ=25℃ TJ=125℃
ISD=44A, VGS = 0 V
±0.1 μA
20 250
μA
1.3
V
isc website：www.iscsemi.cn
2 isc & is...
