Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-251(IPAK) packaging ·Ultra low on-resistance ·High speed switching ·H...
Isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-251(IPAK) packaging ·Ultra low on-resistance ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
IRFU024N
·APPLICATIONS ·Switching applications ·DC-DC converters ·High frequency
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
55
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±20
17 12
68
PD
Total Dissipation
45
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 3.3 110
UNIT ℃/W ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IRFU024N
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
55
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=0.25mA
2
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=10A
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS=55V; VGS= 0V@Tc=25℃ VDS=44V; VGS= 0V@Tc=150℃
ISD=10A, VGS = 0 V
V
4
V
75
mΩ
±...