Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-251(IPAK) packaging ·Uninterruptible power supply ·High speed switchi...
Isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-251(IPAK) packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
INCHANGE Semiconductor
IRFU3607PbF
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
75
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±20
80 56
310
PD
Total Dissipation
140
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 1.05 110
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IRFU3607PbF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
75
V
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=0.25mA
2
4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=46A
7.34 9.0
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 75V; VGS= 0V@Tc=25℃ Tc=125℃
ISD=46A, VGS = 0 V
±0.1 μA
20 250
μA
1.3
V
NOT...
