Isc N-Channel MOSFET Transistor
·FEATURES ·Low power loss ·High speed switching ·Low on-resistance ·100% avalanche teste...
Isc N-Channel MOSFET
Transistor
·FEATURES ·Low power loss ·High speed switching ·Low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
IRLU014PBF
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±10
7.7 4.9
31
PD
Total Dissipation
25
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 5.0 110
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IRLU014PBF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
60
VGS(th)
Gate Threshold Voltage
VDS=±10V; ID=1mA
1
RDS(on)
Drain-Source On-Resistance
VGS= 5V; ID=4.6A VGS= 4V; ID=3.9A
IGSS
Gate-Source Leakage Current
VGS= ±10V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= 60V; VGS= 0V;Tc=25℃ VDS= 48V; VGS= 0V;Tc=25℃
VSDF
Diode forward voltage
ISD=7.7A, VGS = 0 V
V
2
V
0.2 0.28
Ω
±0.1 μA
25 250
μA
1.6
V
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