IXFA22N65X2

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFA22N65X2 IIXFA22N65X2 ·DESCRIPTION ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·100% Avalanche Rated ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 22 A IDM Pulse Drain Current 44 A Ptot Total Dissipation@TC=25℃ 390 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.32 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor IXFA22N65X2 IIXFA22N65X2 SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IF= 22A ;VGS= 0 RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID=11A VGS=±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 650V; VGS= 0 MIN TYPE MAX UNIT 650 V 3 5 V 1.4 V 145 mΩ ±100 nA 10 µA NOTICE： ISC reserves the rights to make changes of th...