DatasheetsPDF.com

IXFA20N85XHV

IXYS

Power MOSFET

X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA20N85XHV VDSS = ID25 =  RDS(on) 850V ...


IXYS

IXFA20N85XHV

File Download Download IXFA20N85XHV Datasheet


Description
X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA20N85XHV VDSS = ID25 =  RDS(on) 850V 20A 330m TO-263HV Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL dT/dt TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 850 V 850 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 20 50 10 800 50 540 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering Heating / Cooling rate, 175C - 210C 1.6 mm (0.062in.) from Case for 10s 300 °C 50 °C/min 260 °C Mounting Force 10..65 / 2.2..14.6 N/lb 2.5 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 2.5mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 850 V 3.5 5.5 V 100 nA 25 A 1.5 mA 330 m G S D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  International Standard Package  High Voltage Package  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)