isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IXFH30N85X
·FEATURES ·With TO-247 packaging ·With low gate driv...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IXFH30N85X
·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low switching loss ·Low on-state resistance ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
850
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
30
IDM
Drain Current-Single Pulsed
60
PD
Total Dissipation
695
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 0.18
UNIT ℃/W
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isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IXFH30N85X
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1mA
850
VGS(th)
Gate Threshold Voltage
VDS=±30V; ID=2.5mA
3.5
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=15A
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±30V;VDS= 0V
VDS= 850V; VGS= 0V;@Tc=25℃ VDS= 850V; VGS= 0V;Tc=125℃
ISD=30A, VGS = 0V
V
5.5
V
220
mΩ
±0.1 μA
25 3000
μA
1.4
V
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