IXFP4N85X

X-Class HiPERFET Power MOSFET N-Channel Enhancement Mode IXFY4N85X IXFA4N85X IXFP4N85X D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 850 V 850 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 3.5 10.0 2 125 50 150 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-252 TO-263 TO-220 0.35 g 2.50 g 3.00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 2A, Notes 1& 2 © 2019 IXYS CORPORATION, All Rights Reserved Characteristic Values Min. Typ. Max. 850 V 3.0 5.5 V 100 nA 5 A 500 A 2.5  VDSS = ID25 =  RDS(on) 850V 3.5A 2.5 TO-252 (IXFY) TO-263 (IXFA) TO-220 (IXFP) G S D (Tab) G S D (Tab) G DS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  International Standard Packages  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Swit...