IXFT30N85XHV

X-Class HiPerFETTM Power MOSFET Advance Technical Information IXFT30N85XHV IXFH30N85X VDSS = ID25 =  RDS(on) 850V 30A 220m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268HV (IXFT) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268HV TO-247 Maximum Ratings 850 V 850 V 30 V 40 V 30 A 60 A 15 A 1 J 50 V/ns 695 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 4 g 6 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 2.5mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 850 V 3.5 5.5 V 100 nA 25 A 3 mA 220 m G S D (Tab) TO-247 (IXFH) G D S D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  International Standard Packages  High Voltage Package  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Con...