IXFJ20N85X

X-Class HiPerFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated IXFJ20N85X D G S VDSS = ID25 =  RDS(on) 850V 9.5A 360m ISO TO-247TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque 50/60 Hz, RM, t = 1min Maximum Ratings 850 V 850 V 30 V 40 V 9.5 A 50.0 A 10 A 800 mJ 50 V/ns 110 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 2500 V~ 5 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 2.5mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 10A, Note 1 Characteristic Values Min. Typ. Max. 850 V 3.5 5.5 V              100 nA 25 A 1.5 mA 360 m G DS Isolated Tab G = Gate D = Drain S = Source Features  Silicon Chip on Direct-Copper Bond (DCB) Substrate  Isolated Mounting Surface  2500V~ Electrical Isolation  Avalanche Rated  Low RDS(ON) and QG  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  Laser D...