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STF5N80K5

INCHANGE

N-Channel MOSFET

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STF5N80K5 ·FEATURES ·Ultra-low gate charge ·Zener-protected ·10...


INCHANGE

STF5N80K5

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STF5N80K5 ·FEATURES ·Ultra-low gate charge ·Zener-protected ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 4 2.3 16 PD Total Dissipation 20 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 6.25 62.5 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STF5N80K5 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA 800 V VGS(th) Gate Threshold Voltage VDS=±30V; ID=0.1mA 3 5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=2A 1.50 1.75 Ω IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS= ±20V;VDS= 0V VDS= 800V; VGS= 0V;TJ=25℃ TJ=125℃ ISD=4A, VGS = 0 V ±10 μA 1 50 μA 1.6 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time...




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