Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
STF10NM65N
·FEATURES ·With TO-220F package ·Low input capacitan...
Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STF10NM65N
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications ·Load switch ·Power management
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGSS ID IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25℃ Tc=100℃
Drain Current-Single Pulsed
±25
9 5.7
36
PD
Total Dissipation @TC=25℃
25
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 5
62.5
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STF10NM65N
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1mA
650
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=4.5A
IGSS IDSS VSDF
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
Drain-Source Leakage Current
VDS=650V; VGS= 0V;Tc=25℃ Tc=125℃
Diode forward voltage
ISD=9A, VGS = 0 V
2.0
4.0
V
0.43 0.48
Ω
±0.1 μA
1 100
μA
1.3
V
...
