isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
STHV102
·FEATURES ·With TO-3PN packaging ·High speed switching ...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STHV102
·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
1000
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous @Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
4.2 2.6
16
PD
Total Dissipation
150
Tj
Operating Junction Temperature
-65~150
Tstg
Storage Temperature
-65~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.83 30
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STHV102
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
1000
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=2A
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 1000V; VGS= 0v;Tj=25℃ VDS= 800V; VGS= 0v;Tj=125℃
ISD=4.2A, VGS = 0 V
2.0
4.0
V
3.1
3.5
Ω
±0.1 μA
25 250
μA
2
V
NOTICE： ...
