STP6N80K5

isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP6N80K5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 4.5 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 85 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.47 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP6N80K5 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =1mA 800 VGS(th) Gate Threshold Voltage VDS=VGS; ID =100μA 3 RDS(on) Drain-Source On-Resistance VGS=10V; ID=2A IGSS Gate-Source Leakage Current VGS= ±20V;VDS=0V VDS=800V; VGS= 0V IDSS Drain-Source Leakage Current VDS=800V; VGS= 0V;Tj= 125℃ VSD Diode forward voltage Is=4.5A; VGS = 0V V 5 V 1.6 Ω ±10 μA ...