isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IXFP12N65X2M
·FEATURES ·With low gate drive requirements ·Easy ...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IXFP12N65X2M
·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
12
IDM
Drain Current-Single Pulsed
24
PD
Total Dissipation
40
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 3.12
UNIT ℃/W
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isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IXFP12N65X2M
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
650
VGS(th)
Gate Threshold Voltage
VDS=±30V; ID=0.25mA
3.0
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=6A
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±30V;VDS= 0V
VDS= 650V; VGS= 0V;@Tc=25℃ Tc=125℃
ISD=12A, VGS = 0 V
V
5.0
V
310
mΩ
±0.1 μA
10 500
μA
1.4
V
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