IXTA1N100P

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTA1N100P ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 1000 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 1.0 IDM Drain Current-Single Pulsed 1.8 PD Total Dissipation 50 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.65 60 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTA1N100P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 1000 V VGS(th) Gate Threshold Voltage VDS= ±20V; ID=0.05mA 2.5 4.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=0.5A 12.2 15 Ω IGSS IDSS VSDF Gate-Source Leakage Current VGS= ±20V;VDS= 0V Drain-Source Leakage Current VDS= 1000V; VGS= 0V;TJ=25℃ TJ=125℃ Diode forward voltage ISD=1A, VGS = 0 V ±0.05 μA 5 100 μA 1.5 V NOTICE： ISC reserves the rights ...