isc N-Channel MOSFET Transistor
·FEATURES ·With TO-247 packaging ·High speed switching ·Very high commutation ruggedness...
isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-247 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·PFC stages ·Power supply ·Switching applications
INCHANGE Semiconductor
IXTH60N20L2
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
60
IDM
Drain Current-Single Pulsed
150
PD
Total Dissipation
540
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 0.23
UNIT ℃/W
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isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IXTH60N20L2
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1mA
200
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
2.5
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=30A
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 200V; VGS= 0V;Tc=25℃ VDS= 200V; VGS= 0V;Tc=125℃
ISD=60A, VGS = 0 V
V
4.5
V
45
mΩ
±0.1 μA
5 50
μA
1.4
V
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