IXTK110N20L2

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTK110N20L2 ·FEATURES ·With TO-3PL package ·Low input capacitance and gate charge ·High speed switching ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 110 IDM Drain Current-Single Pulsed 275 PD Total Dissipation @TC=25℃ 960 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.13 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTK110N20L2 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA 200 VGS(th) Gate Threshold Voltage VDS=VGS; ID=3mA 2.0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=55A IGSS IDSS VSDF Gate-Source Leakage Current VGS= ±20V;VDS= 0V Drain-Source Leakage Current VDS=200V; VGS= 0V;Tc=25℃ Tc=125℃ Diode forward voltage ISD=55A, VGS = 0V V 4.5 V 24 mΩ ±0.2 μA 50 2500 ...