Isc N-Channel MOSFET Transistor
·FEATURES ·Low input capacitance and gate charge ·Low gate input resistances ·100% avala...
Isc N-Channel MOSFET
Transistor
·FEATURES ·Low input capacitance and gate charge ·Low gate input resistances ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
INCHANGE Semiconductor
STP26NM60N
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±25
20 12.6
80
PD
Total Dissipation
140
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.89 62.5
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STP26NM60N
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1mA
600
V
VGS(th)
Gate Threshold Voltage
VDS=±25V; ID=0.1mA
2
4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=10A
135 165
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±25V;VDS= 0V
VDS= 600V; VGS= 0V；TJ=25℃ TJ=125℃
ISD=20A, VGS = 0 V
±0.1 μA
1 100
μA
1.5
V
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