Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
STP60N06-14
·FEATURES ·With low gate drive requirements ·Easy t...
Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STP60N06-14
·FEATURES ·With low gate drive requirements ·Easy to drive ·High current capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Solenold and relay dirvers ·DC-DC converters ·Automotive environment
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±20
60 50
240
PD
Total Dissipation
150
Tj
Operating Junction Temperature
-65~175
Tstg
Storage Temperature
-65~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 1.0 62.5
UNIT ℃/W ℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STP60N06-14
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=0.25mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=30A
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 60V; VGS= 0V;TJ=25℃ VDS= 48V; VGS= 0V;TJ=125℃
ISD=60A, VGS = 0 V
MIN TYP MAX UNIT
60
V
2
4
V
12
14
mΩ
±0.1 μA
250 1000
...
