Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
STP60NF06L
·FEATURES ·With low gate drive requirements ·Easy to...
Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STP60NF06L
·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Solenold and relay dirvers ·DC-DC converters ·Automotive environment
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±15
60 42
240
PD
Total Dissipation
110
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 1.36 62.5
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STP60NF06L
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
60
V
VGS(th)
Gate Threshold Voltage
VDS=±15V; ID=0.25mA
1
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=30A
12
14
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±15V;VDS= 0V
VDS= 60V; VGS= 0V;TJ=25℃ TJ=125℃
ISD=100A, VGS = 0 V
±0.1 μA
1 10
μA
1.2
V
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