Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
STWA45N65M5
·FEATURES ·Excellent switching performance ·Higher ...
Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STWA45N65M5
·FEATURES ·Excellent switching performance ·Higher VDSS rating ·100 % Rg and UIS Tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGSS
Gate-Source Voltage
±25
ID
Drain Current-Continuous@TC=100℃
22
IDM
Drain Current-Single Pulsed
140
PD
Total Dissipation
210
Tch
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.6 50
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STWA45N65M5
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1mA
650
V
VGS(th)
Gate Threshold Voltage
VDS= ±25V; ID=1mA
3
5
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=17.5A
67
78
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current
VGS= ±25V;VDS= 0V
Drain-Source Leakage Current
VDS= 710V; VGS= 0V；TJ=25℃ TJ=125℃
Diode forward voltage
ISD=35A, VGS = 0 V
±0.1 μA
1 100
μA
1.5
V
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