Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
SUD15N15-95
·FEATURES ·With To-252(DPAK) package ·Low input cap...
Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
SUD15N15-95
·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
150
VGSS ID IDM
Gate-Source Voltage Drain Current-Continuous Drain Current-Single Pulsed
±20
15 8.7
25
PD
Total Dissipation @TC=25℃
62
Tch
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 2.4 55
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
SUD15N15-95
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=0.25mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=15A
IGSS IDSS VSDF
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
Drain-Source Leakage Current
VDS=120V; VGS= 0V;Tj=25℃ Tj=125℃
Diode forward voltage
ISD=15A, VGS = 0 V
150
V
2
4
V
77
95
mΩ
±0.1 μA
1 50
μA
1.5
V
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