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SUD25N15-52 Dataheets PDF



Part Number SUD25N15-52
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet SUD25N15-52 DatasheetSUD25N15-52 Datasheet (PDF)

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SUD25N15-52 ·FEATURES ·TrenchFET® Power MOSFET ·175℃ Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·D Primary Side Switch ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGSS ID IDM PD Tch Gate-Source Voltage Drain Current-Continuous@TC=25℃ ( TJ=175℃) TC=125℃ Drain Current-Single Pulsed Total D.

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SUD25N15-52 ·FEATURES ·TrenchFET® Power MOSFET ·175℃ Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·D Primary Side Switch ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGSS ID IDM PD Tch Gate-Source Voltage Drain Current-Continuous@TC=25℃ ( TJ=175℃) TC=125℃ Drain Current-Single Pulsed Total Dissipation @TC=25℃ TA=25℃ Max. Operating Junction Temperature ±20 25 14.5 50 136 3 -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance t≤10sec Steady State MAX 1.1 UNIT ℃/W 18 ℃/W 50 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SUD25N15-52 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 150 V VGS(th) Gate Threshold Voltage VDS= ±20V; ID=0.25mA 2 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=5A;Tj=25℃ VGS= 10V; ID=5A;Tj=125℃ VGS= 10V; ID=5A;Tj=175℃ VGS= 6V; ID=5A;Tj=25℃ IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V VDS= 150V; VGS= 0V;TJ=25℃ IDSS Drain-Source Leakage Current TJ=125℃ TJ=175℃ VSDF Diode forward voltage IF =25A, VGS = 0 V 4 V 42 52 109 145 mΩ 47 60 ±0.1 μA 1 50 mA 250 0.9 1.5 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark .


SUD15N15-95 SUD25N15-52 SUD25N15-52-E3


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