Isc P-Channel MOSFET Transistor
INCHANGE Semiconductor
SUD50P04-08
·FEATURES ·With To-252(DPAK) package ·Low input cap...
Isc P-Channel MOSFET
Transistor
INCHANGE Semiconductor
SUD50P04-08
·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications ·Motor contorl ·DC-DC conventers
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-40
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous Tc=25℃ Tc=70℃
Drain Current-Single Pulsed
±20
-50 -50
-100
PD
Total Dissipation @TC=25℃
73.5
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 1.7 50
UNIT ℃/W ℃/W
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Isc P-Channel MOSFET
Transistor
INCHANGE Semiconductor
SUD50P04-08
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= -0.25mA
-40
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID=-0.25mA
-1.0
-2.5
V
RDS(on)
Drain-Source On-Resistance
VGS= -10V; ID=-22A
6.7
8.1
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
Drain-Source Leakage Current
VDS=-40V; VGS= 0V;Tc=25℃ Tc=125℃
Diode forward voltage
ISD=-10A, VGS = 0 V
±...
