isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
TK16J60W
·FEATURES ·With TO-3PN packaging ·High speed switching...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK16J60W
·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
15.8
IDM
Drain Current-Single Pulsed
63.2
PD
Total Dissipation
130
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.96 50
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
TK16J60W
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 10mA
VGS(th)
Gate Threshold Voltage
VDS=10V; ID=0.79mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=7.9A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= 600V; VGS= 0V
VSDF
Diode forward voltage
ISD=15.8A, VGS = 0 V
600
V
2.7
3.7
V
0.16 0.19
Ω
±1
μA
10
μA
1.7
V
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