TK31N60W

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK31N60W ·FEATURES ·With TO-247 packaging ·Easy to use ·High speed switching ·Very high commutation ruggedness ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 30.8 IDM Drain Current-Single Pulsed 123 PD Total Dissipation 230 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.54 50 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK31N60W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=1.5mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=15.4A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 600V; VGS= 0V VSD Diode forward voltage ISD=30.8A, VGS = 0 V 600 V 2.7 3.7 V 88 mΩ ±1 μA 10 μA 1.7 V NOTICE： ISC reserves t...