TK40J60U

Isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.065Ω (typ.) ·Easy to control Gate switching ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) ·Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor TK40J60U ·APPLICATION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 40 IDM Drain Current-Single Pulsed 80 PD Total Dissipation @TC=25℃ 320 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.39 50 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK40J60U ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=1mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=20A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 600V; VGS= 0V VSD Diode forward voltage IDR =40A, VGS = 0 V ...