IXTQ22N50P

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTQ22N50P ·FEATURES ·With TO-3PN packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 22 IDM Drain Current-Single Pulsed 66 PD Total Dissipation 350 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.35 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTQ22N50P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 500 VGS(th) Gate Threshold Voltage VDS=±30V; ID=0.25mA 3 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=11A IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS= ±30V;VDS= 0V VDS= 500V; VGS= 0V@Tc=25℃ Tc=125℃ ISD=16A, VGS = 0 V V 5 V 270 mΩ ±0.01 μA 5 50 μA 1.5 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The inform...