Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
MTP2N50
·FEATURES ·With low gate drive requirements ·Easy to dr...
Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
MTP2N50
·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGSS
Gate-Source Voltage
±20
ID
Drain Current-Continuous@TC=100℃
2
IDM
Drain Current-Single Pulsed
10
PD
Total Dissipation
75
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 1.36 62.5
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
MTP2N50
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
500
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=0.25mA
2.0
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=1.0A
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 500V; VGS= 0V;TJ=25℃ VDS= 400V; VGS= 0V;TJ=25℃
ISD=2.0A, VGS = 0 V
V
4.5
V
4.0
Ω
±0.1 μA
250 1000
μA
1.3
V
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