MTP3N50E Datasheet

MTP3N50E N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·Popular AC-DC applications ·Powe.

Features

·With TO-220 packaging
·High speed switching
·Very high commutation ruggedness
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·PFC stages
·Popular AC-DC applications
·Power supply
·Switching applications INCHANGE Semiconductor MTP3N50E
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous Drain Current-Single Pulsed ±20 3 10 10 PD Total Dissipation 50 Tj Operating Junction Temperature -65~150 Tstg Sto.