NTB082N65S3F

isc N-Channel MOSFET Transistor INCHANGE Semiconductor NTB082N65S3F ·DESCRIPTION ·Drain-source on-resistance: RDS(on) ≤ 82mΩ@10V ·Drain Source Voltage: VDSS= 650V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·Industrial power supplies ·UPS ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 40 A IDM Pulse Drain Current 100 A PD Total Dissipation@TC=25℃ 320 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.39 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor NTB082N65S3F SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS= 20A ;VGS= 0 RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID=20A VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 650V; VGS= 0 MIN TYPE MAX UNIT 650 V 3 5 V 1.3 V 82 mΩ ±100 nA 10 µA NOTICE： ISC reserves the rights to make changes of ...