isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
NTE2393
·FEATURES ·With TO-3PN packaging ·High speed switching ...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
NTE2393
·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous @Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±20
9 5.6
36
PD
Total Dissipation
150
Tj
Operating Junction Temperature
-65~150
Tstg
Storage Temperature
-65~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.83 40
UNIT ℃/W ℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
NTE2393
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
500
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=0.25mA
2.0
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=4.5A
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 500V; VGS= 0v;Tj=25℃ VDS= 400V; VGS= 0v;Tj=125℃
ISD=9A, VGS = 0 V
V
4.0
V
0.7
Ω
±0.1 μA
250 1000
μA
1.15
V
NOTICE： ISC ...
