Isc N-Channel MOSFET Transistor
·FEATURES ·Low on-resistance ·Fast switching speed ·Parallel use is easy ·100% avalanche...
Isc N-Channel MOSFET
Transistor
·FEATURES ·Low on-resistance ·Fast switching speed ·Parallel use is easy ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
INCHANGE Semiconductor
R6015ENX
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBO L
PARAMETER
VALUE
VDSS Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage;static Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed
±20
15 8.1
30
PD
Total Dissipation
60
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
SYMBO L
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a )
Channel-to-ambient thermal resistance
MA X
UNIT
2.1
℃/W
70
℃/W
·THERMAL CHARACTERISTICS
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Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
R6015ENX
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1mA
600
V
VGS(th)
Gate Threshold Voltage
VDS=±20V; ID=1mA
2
4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=6.5A
260 290
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 600V; VGS= 0V；TJ=25℃ TJ=125℃
ISD=15A, VGS = 0 V
±0.1 μA
100 1000
μA
1.5
V
NOTICE： ISC reserves the rights to make changes of the cont...
