R6020ENX

isc N-Channel MOSFET Transistor INCHANGE Semiconductor R6020ENX ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.196Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 60 PD Total Dissipation @TC=25℃ 68 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.84 UNIT V V A A W ℃ ℃ UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor R6020ENX ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 1mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=9.5A 600 V 2 4 V 0.196 Ω IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V VDS=600V; VGS= 0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V;Tj=125℃ VSD Diode forward on voltage ISD =20A, VGS = 0 V ±100 nA 100 μA 1000 1.5 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time wi...