DatasheetsPDF.com

RFP70N03 Dataheets PDF



Part Number RFP70N03
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet RFP70N03 DatasheetRFP70N03 Datasheet (PDF)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor RFP70N03 ·FEATURES ·With TO-220 packaging ·Low switching loss ·Ultra low gate charge ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·AC-DC converters ·LED lighting ·Uninterruptible power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID Drain .

  RFP70N03   RFP70N03



Document
isc N-Channel MOSFET Transistor INCHANGE Semiconductor RFP70N03 ·FEATURES ·With TO-220 packaging ·Low switching loss ·Ultra low gate charge ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·AC-DC converters ·LED lighting ·Uninterruptible power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 70 IDM Drain Current-Single Pulsed 200 PD Total Dissipation 150 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.59 62.5 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor RFP70N03 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 30 VGS(th) Gate Threshold Voltage VDS=±20V; ID=0.25mA 2 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=70A IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS= ±20V;VDS= 0V VDS= 30V; VGS= 0V;Tj=25℃ VDS= 30V; VGS= 0V;Tj=150℃ ISD=70A, VGS = 0V V 4 V 10 mΩ ±0.1 μA 1 50 μA 1.5 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark .


RFG70N06 RFP70N03 RU75230S


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)