Isc N-Channel MOSFET Transistor
·FEATURES ·With To-263(D2PAK) package ·Ultra low on-resistance ·Fast Switching Speed ·Hi...
Isc N-Channel MOSFET
Transistor
·FEATURES ·With To-263(D2PAK) package ·Ultra low on-resistance ·Fast Switching Speed ·High power and current handling capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·High current switching applications ·DC-DC convertors
INCHANGE Semiconductor
RU75230S
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
75
VGSS ID IDM PD Tch
Gate-Source Voltage
Drain Current-Continuous@TC=25℃
(VGS=10V)
TC=125℃
Drain Current-Single Pulsed
Total Dissipation @TC=25℃ TC=125℃
Max. Operating Junction Temperature
±25
230 163
920
333 167
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.45 62.5
UNIT ℃/W ℃/W
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Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
RU75230S
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
75
V
VGS(th)
Gate Threshold Voltage
VDS= ±25V; ID=0.25mA
2
4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=75A
2.6
3
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current
VGS= ±25V;VDS= 0V
Drain-Source Leakage Current
VDS=75V; VGS= 0V；TJ=25℃ TJ=125℃
Diode forward volt...
