SMK0990CI

isc N-Channel MOSFET Transistor INCHANGE Semiconductor SMK0990CI ·FEATURES ·New revolutionary high voltage technology ·With TO-3PN package ·Drain-Source breakdown voltage:BVDSS=900V(Min.) ·Low drain-source On resistance: RDS(on)=1.4Ω (Max.) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 9 5.7 36 PD Total Dissipation 130 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.96 40 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor SMK0990CI ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 900 V VGS(th) Gate Threshold Voltage VDS=±30V; ID=0.25mA 3 5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=4.5A 1.12 1.4 Ω IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS= ±30V;VDS= 0V VDS= 900V; VGS= 0V；TJ=25℃ TJ=125℃ ISD=9.5A, V...