R6024ENJ

R6024ENJ Nch 600V 24A Power MOSFET Data Sheet VDSS RDS(on) (Max.) ID PD 600V 0.165W 24A 40W lOutline LPT(S) (SC-83) TO-263(D2PAK) (1) (2) (3) lFeatures 1) Low on-resistance. lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. 5) Parallel use is easy. (1) Gate (2) Drain (3) Source *1 BODY DIODE 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Switching Power Supply Tape width (mm) Type Basic ordering unit (pcs) Taping code 24 1,000 TL Marking R6024ENJ lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Reverse diode dv/dt Tc = 25°C Tc = 100°C VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 EAR *3 IAR PD Tj Tstg dv/dt *4 600 24 13.0 72 20 497 0.75 4.1 40 150 -55 to +150 15 V A A A V mJ mJ A W °C °C V/ns www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/12 2014.03 - Rev.B R6024ENJ lAbsolute maximum ratings Parameter Drain - Source voltage slope Data Sheet Symbol Conditions dv/dt VDS = 480V Tj = 25°C Values Unit 50 V/ns lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient*5 ...