2N2955

isc Silicon PNP Power Transistors DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1V(Max)@ IC= -4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -15 A IB Base Current PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -7 A 115 W 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.52 ℃/W 2N2955 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -4V ICEO Collector Cutoff Current VCE= -100V; IB= 0 IEBO Emitter Cutoff Current VEB= -7.0V; IC=0 hFE-1 DC Current Gain IC= -4A ; VCE= -4V hFE-2 Is/b fT DC Current Gain Second Breakdown Collector Current ...