2N3771

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N3771 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 15A ·Low Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC = 15A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage 50 V 50 V 40 V VEBO IC ICM Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak 5 V 30 A 30 A IB Base Current-Continuous 7.5 A IBM Base Current-Peak 15 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER 200 ℃ -65~200 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N3771 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; VBE(off)= 1.5V; RBE=100Ω VCER(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; RBE= 100Ω VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A ...