2N6045G

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2N6045G DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A ·Complement to Type 2N6042 ·G：Pb-Free package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 100 VCEO Collector-Emitter Voltage 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 ICM Collector Current-Peak 16 IB Base Current-DC 120 PC Collector Power Dissipation TC=25℃ 75 Tj Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A mA W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.67 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2N6045G ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A, IB= 12mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation voltage IC= 8A, IB= 80mA 4.0 V VBE(sat) ...