2N6056

INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2N6056 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·Low Collector-Emitter Saturation Voltage- : VCE (sat)= 2.0V(Max.)@IC= 4.0A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) ·Complement to type 2N6054 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current 120 mA PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.75 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 80mA VBE(on) Base-Emitter On voltage IC= 4A ; VCE= 3V ICEO...